IPB200N25N3G
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Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
| Application | SWITCHING |
| JESD-30 Code | R-PSSO-G2 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-263AB |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Tin (Sn) |
| DLA Qualification | Not Qualified |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 300 |
| Drain Current-Max (ID) (A) | 64 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 250 |
| Feedback Cap-Max (Crss) (pF) | 4 |
| Peak Reflow Temperature (Cel) | 245 |
| Operating Temperature-Max (Cel) | 175 |
| Operating Temperature-Min (Cel) | -55 |
| Avalanche Energy Rating (Eas) (mJ) | 320 |
| Pulsed Drain Current-Max (IDM) (A) | 256 |
| Drain-source On Resistance-Max (ohm) | 0.02 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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Sourceability North America, LLC
9715 Burnet Rd, Ste 200