K4A8G165WC-BCTD

Samsung Semiconductor, Inc.

K4A8G165WC-BCTD

Availability

Design risk

Price trend

Lead time

Semiconductors

DDR4 DRAM

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

DDR4 DRAM

Lead time 6 weeks

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA

Technical Data
I/O Type COMMON
Technology CMOS
Width (mm) 7.5
Access Mode MULTI BANK PAGE BURST
Length (mm) 13.3
JESD-30 Code R-PBGA-B96
Memory Width 16
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style (Meter) GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
Memory IC Type DDR4 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192
Number of Ports 1
Temperature Grade OTHER
Terminal Position BOTTOM
Memory Organization 512MX16
Number of Functions 1
Number of Terminals 96
Terminal Pitch (mm) 0.8
Number of Words Code 512M
Memory Density (bits) 8589934592
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2
Supply Voltage-Max (V) 1.26
Supply Voltage-Min (V) 1.14
Supply Voltage-Nom (V) 1.2
Number of Words (words) 536870912
Sequential Burst Length 8
Standby Current-Max (A) 0.011
Supply Current-Max (mA) 204
Interleaved Burst Length 8
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 1333
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 95
Operating Temperature-Min (Cel) 0
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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