BSC052N03LSATMA1

INFINEON TECHNOLOGIES AG

BSC052N03LSATMA1

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 17
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30
Avalanche Energy Rating (Eas) (mJ) 12
Pulsed Drain Current-Max (IDM) (A) 228
Drain-source On Resistance-Max (ohm) 0.0072

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215