SUP60020E-GE3

Vishay Intertechnology, Inc.

SUP60020E-GE3

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet SUP60020E-GE3
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet SUP60020E-GE3

MOSFET N-CH 80V 150A TO220AB

Technical Data
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 150
Transistor Application SWITCHING
Turn-on Time-Max (ton) (ns) 86
Feedback Cap-Max (Crss) (pF) 50
DS Breakdown Voltage-Min (V) 80
Turn-off Time-Max (toff) (ns) 130
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) (mJ) 180
Drain-source On Resistance-Max (ohm) 0.0024
Pulsed Drain Current-Max (IDM) (A) 500

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215