SKM75GB12V

SEMIKRON INTERNATIONAL

SKM75GB12V

Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 6 weeks
Data sheet SKM75GB12V
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Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 6 weeks
Data sheet SKM75GB12V

SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module

Technical Data
VCEsat-Max (V) 2.3
JESD-30 Code R-XUFM-X11
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
Case Connection ISOLATED
Terminal Position UPPER
Number of Elements 2
Reference Standard UL RECOGNIZED
Number of Terminals 11
Qualification Status Not Qualified
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Gate-emitter Voltage-Max (V) 20
Operating Temperature-Max (Cel) 175
Collector Current-Max (IC) (A) 121
Transistor Element Material SILICON
Collector-emitter Voltage-Max (V) 1200
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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