IPD90P04P4L04ATMA2

INFINEON TECHNOLOGIES AG

IPD90P04P4L04ATMA2

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
0 results found

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET P-CH 40V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

Technical Data
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-252
Package Shape RECTANGULAR
Package Style TO-252-3 (DPAK)
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 125
Drain Current-Max (ID) (A) 90
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 40
Feedback Cap-Max (Crss) (pF) 200
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 60
Pulsed Drain Current-Max (IDM) (A) 360
Drain-source On Resistance-Max (ohm) 0.0043
Screening Level / Reference Standard AEC-Q101; IEC-68-1

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215