AONS66402

Alpha and Omega Semiconductor

AONS66402

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet AONS66402
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Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet AONS66402

MOSFET N-CH 40V 49A/85A

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Number of Elements 1
Number of Terminals 5
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 119
Drain Current-Max (ID) (A) 85
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 40
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 406
Pulsed Drain Current-Max (IDM) (A) 340
Drain-source On Resistance-Max (ohm) 0.0023

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