IPP60R125CP

INFINEON TECHNOLOGIES AG

IPP60R125CP

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet IPP60R125CP
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Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet IPP60R125CP

Trans MOSFET N-CH 600V 25A 3-Pin TO-220AB Tube

Technical Data
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Tin (Sn)
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 208
Drain Current-Max (ID) (A) 25
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 600
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 150
Avalanche Energy Rating (Eas) (mJ) 708
Pulsed Drain Current-Max (IDM) (A) 82
Drain-source On Resistance-Max (ohm) 0.125
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215