SI7997DP-T1-GE3

Vishay Intertechnology, Inc.

SI7997DP-T1-GE3

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
0 results found

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R

Technical Data
JESD-30 Code R-XDSO-C5
Configuration 2 P-Channel (Dual)
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form C BEND
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2
Number of Terminals 5
Package Body Material UNSPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 46
Drain Current-Max (ID) (A) 60
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Avalanche Energy Rating (Eas) (mJ) 45
Pulsed Drain Current-Max (IDM) (A) 100
Drain-source On Resistance-Max (ohm) 0.0078
Time@Peak Reflow Temperature-Max (s) 40

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215