PXN012-60QLJ

Nexperia BV

PXN012-60QLJ

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet PXN012-60QLJ
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Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet PXN012-60QLJ

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 1
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 34.7
Drain Current-Max (ID) (A) 42
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60
Feedback Cap-Max (Crss) (pF) 31
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 90
Pulsed Drain Current-Max (IDM) (A) 168
Drain-source On Resistance-Max (ohm) 0.0176
Screening Level / Reference Standard IEC-60134

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215