FF600R12ME4

INFINEON TECHNOLOGIES AG

FF600R12ME4

Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 6 weeks
Data sheet FF600R12ME4
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Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 6 weeks
Data sheet FF600R12ME4

IGBT Modules IGBT 1200V 600A

Technical Data
Application POWER CONTROL
JESD-30 Code R-XUFM-X7
Configuration Dual
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.1
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 3650
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 310
Gate-emitter Voltage-Max (V) 20
Peak Reflow Temperature (Cel) NOT SPECIFIED
Turn-off Time-Nom (toff) (ns) 770
Collector Current-Max (IC) (A) 995
Operating Temperature-Max (Cel) 175
Collector-emitter Voltage-Max (V) 1200
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215