IPL60R075CFD7AUMA1

INFINEON TECHNOLOGIES AG

IPL60R075CFD7AUMA1

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET N-CH 600V 33A 4-Pin VSON EP T/R

Technical Data
Application SWITCHING
JESD-30 Code S-PSSO-N4
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 33
Moisture Sensitivity Level 2A
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 600
Operating Temperature-Min (Cel) -40
Avalanche Energy Rating (Eas) (mJ) 151
Pulsed Drain Current-Max (IDM) (A) 129
Drain-source On Resistance-Max (ohm) 0.075

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215