SSM6K407TU,LF(T

Toshiba Corporation

SSM6K407TU,LF(T

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-F6
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position DUAL
Number of Elements 1
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.5
Drain Current-Max (ID) (A) 2
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60
Feedback Cap-Max (Crss) (pF) 25
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 150
Drain-source On Resistance-Max (ohm) 0.44
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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