AT-32032-TR1G

Broadcom Inc.

AT-32032-TR1G

Availability

Design risk

Price trend

Lead time

Semiconductors

RF Power Field-Effect Transistors

Lead time 6 weeks
Data sheet AT-32032-TR1G
9 results found

Availability

Design risk

Price trend

Lead time

Semiconductors

RF Power Field-Effect Transistors

Lead time 6 weeks
Data sheet AT-32032-TR1G

RF Bipolar Transistors Transistor Si Low Current

Technical Data
JESD-30 Code R-PDSO-G3
Configuration SINGLE
JESD-609 Code e3
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
Terminal Finish MATTE TIN
Terminal Position DUAL
Additional Feature HIGH RELIABILITY
Number of Elements 1
Number of Terminals 3
Qualification Status Not Qualified
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
Highest Frequency Band S BAND
Transistor Application AMPLIFIER
DC Current Gain-Min (hFE) 70
Operating Temperature-Max (Cel) 150
Collector Current-Max (IC) (A) 0.04
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) (W) 0.2
Transistor Element Material SILICON
Collector-emitter Voltage-Max (V) 5.5
Peak Reflow Temperature (Cel) 260

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215