PMPB16EPX

Nexperia BV

PMPB16EPX

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Design risk

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Lead time

Semiconductors

Power Field-Effect Transistors

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Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
Data sheet PMPB16EPX

30 V, P-channel Trench MOSFET

Technical Data
JESD-609 Code e3
Terminal Finish TIN
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Nexperia BV PMPB16EPX?

You can download the user manual and technical specifications for Nexperia BV PMPB16EPX in the documentation section.

What are the key features of Nexperia BV PMPB16EPX?

30 V, P-channel Trench MOSFET

How does Nexperia BV PMPB16EPX contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, PMPB16EPX optimizes energy distribution in electronic devices. Its 30 V, P-channel Trench MOSFET allows minimizing losses and increasing the overall system efficiency.

Why is PMPB16EPX suitable for complex power management systems?

As a component of the subcategory Semiconductors, PMPB16EPX ensures stable output voltage even when the load changes. Its 30 V, P-channel Trench MOSFET makes it a reliable element in multi-level power systems.