PJQ4463AP_R2_00001

PANJIT International Inc.

PJQ4463AP_R2_00001

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

MOSFETs dfn3333 p chan 60v

Technical Data
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Additional Feature ULTRA LOW RESISTANCE
Number of Elements 1
Number of Terminals 5
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Drain Current-Max (ID) (A) 4.2
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A) 16.8
Drain-source On Resistance-Max (ohm) 0.068
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215