BAV199W,115

Nexperia BV

BAV199W,115

Availability

Design risk

Price trend

Lead time

Semiconductors

Rectifier Diodes

Lead time 6 weeks
Data sheet BAV199W,115
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Availability

Design risk

Price trend

Lead time

Semiconductors

Rectifier Diodes

Lead time 6 weeks
Data sheet BAV199W,115

Low-leakage double diode

Technical Data
Diode Type RECTIFIER DIODE
Application GENERAL PURPOSE
JESD-30 Code R-PDSO-G3
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
Terminal Finish TIN
Terminal Position DUAL
Additional Feature LOW LEAKAGE CURRENT
Number of Elements 2
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 0.135
Power Dissipation-Max (W) 0.15
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max (V) 85
Reverse Recovery Time-Max (us) 3
Operating Temperature-Max (Cel) 150
Screening Level / Reference Standard IEC-134
Time@Peak Reflow Temperature-Max (s) 30

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