ZXTN2010ZTA

Diodes Incorporated

ZXTN2010ZTA

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

Lead time 6 weeks
Data sheet ZXTN2010ZTA
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Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

Lead time 6 weeks
Data sheet ZXTN2010ZTA

Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) SOT-89 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PSSO-F3
Configuration Single
Package Shape RECTANGULAR
Package Style SOT-89 (SC-62)
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
VCEsat-Max (V) 0.23
Case Connection COLLECTOR
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 20
Power Dissipation-Max (W) 2.1
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260
Collector Current-Max (IC) (A) 5
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Collector-emitter Voltage-Max (V) 60
Collector-base Capacitance-Max (pF) 31
Transition Frequency-Nom (fT) (MHz) 130
Screening Level / Reference Standard MIL-STD-202
Time@Peak Reflow Temperature-Max (s) 30
Width 2.6 mm
Length 4.6 mm

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