IRF6894MTRPBF
Availability
Design risk
Price trend
Lead time
Trans MOSFET N-CH 25V 32A 7-Pin Direct-FET MX T/R 4.8k
| JESD-30 Code | R-XBCC-N3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JESD-609 Code | e3 |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | CHIP CARRIER |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Qualification Status | Not Qualified |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) (A) | 33 |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min (V) | 25 |
| Operating Temperature-Max (Cel) | 150 |
| Moisture Sensitivity Level | 1 |
| Power Dissipation-Max (Abs) (W) | 54 |
| Transistor Element Material | SILICON |
| Avalanche Energy Rating (Eas) (mJ) | 410 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Drain-source On Resistance-Max (ohm) | 0.0012 |
| Pulsed Drain Current-Max (IDM) (A) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Submit request
CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200