IS45S16400J-7TLA2-TR
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DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TSOP-II T/R
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 10.1600 |
| Access Mode | FOUR BANK PAGE BURST |
| Length (mm) | 22.2200 |
| JESD-30 Code | R-PDSO-G54 |
| Memory Width | 16 |
| Package Code | TSOP |
| Self Refresh | YES |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Memory IC Type | SYNCHRONOUS DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 4096 |
| Number of Ports | 1 |
| DLA Qualification | Not Qualified |
| Temperature Grade | INDUSTRIAL |
| Terminal Position | DUAL |
| Additional Feature | AUTO/SELF REFRESH |
| Memory Organization | 4MX16 |
| Number of Functions | 1 |
| Number of Terminals | 54 |
| Terminal Pitch (mm) | 0.800 |
| Access Time-Max (ns) | 5.4000000000000000 |
| Number of Words Code | 4M |
| Memory Density (bits) | 67108864.0000000000000000 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.2000 |
| Supply Voltage-Max (V) | 3.60000 |
| Supply Voltage-Min (V) | 3.00000 |
| Supply Voltage-Nom (V) | 3.3 |
| Number of Words (words) | 4194304.0000000000000000 |
| Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max (A) | 0.002000000000000 |
| Supply Current-Max (mA) | 130.000000000000000 |
| Interleaved Burst Length | 1,2,4,8 |
| Package Equivalence Code | TSOP54,.46,32 |
| Clock Frequency-Max (MHz) | 143.00000 |
| Operating Temperature-Max (Cel) | 105.0 |
| Operating Temperature-Min (Cel) | -40.0 |
| Screening Level / Reference Standard | AEC-Q100 |
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