IS42S16800F-7BLI-TR
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DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TFBGA T/R
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 8.0000 |
| Access Mode | FOUR BANK PAGE BURST |
| Length (mm) | 8.0000 |
| JESD-30 Code | S-PBGA-B54 |
| Memory Width | 16 |
| Package Code | TFBGA |
| Self Refresh | YES |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| J-STD-609 Code | e2 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 4096 |
| Number of Ports | 1 |
| Terminal Finish | Tin/Silver (Sn/Ag) |
| DLA Qualification | Not Qualified |
| Temperature Grade | INDUSTRIAL |
| Terminal Position | BOTTOM |
| Additional Feature | AUTO/SELF REFRESH |
| Memory Organization | 8MX16 |
| Number of Functions | 1 |
| Number of Terminals | 54 |
| Terminal Pitch (mm) | 0.800 |
| Access Time-Max (ns) | 5.4000000000000000 |
| Number of Words Code | 8M |
| Memory Density (bits) | 134217728.0000000000000000 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.2000 |
| Supply Voltage-Max (V) | 3.60000 |
| Supply Voltage-Min (V) | 3.00000 |
| Supply Voltage-Nom (V) | 3.3 |
| Number of Words (words) | 8388608.0000000000000000 |
| Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max (A) | 0.002000000000000 |
| Supply Current-Max (mA) | 100.000000000000000 |
| Interleaved Burst Length | 1,2,4,8 |
| Package Equivalence Code | BGA54,9X9,32 |
| Clock Frequency-Max (MHz) | 143.00000 |
| Moisture Sensitivity Level | 3 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 85.0 |
| Operating Temperature-Min (Cel) | -40.0 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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