SI7234DP-T1-GE3

Vishay Intertechnology, Inc.

SI7234DP-T1-GE3

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET N-CH 12V 60A 8-Pin PowerPAK SO T/R

Technical Data
Application SWITCHING
JESD-30 Code R-XDSO-C6
Configuration 2 N-Channel (Dual)
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form C BEND
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2
Number of Terminals 6
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 46
Drain Current-Max (ID) (A) 24.8
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 12
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Pulsed Drain Current-Max (IDM) (A) 80
Drain-source On Resistance-Max (ohm) 0.005
Time@Peak Reflow Temperature-Max (s) 30

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215