PDTB113ZT,215
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PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-G3 |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| JEDEC-95 Code | TO-236AB |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| Terminal Finish | TIN |
| Terminal Position | DUAL |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | PNP |
| DC Current Gain-Min (hFE) | 70 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Peak Reflow Temperature (Cel) | 260 |
| Collector Current-Max (IC) (A) | 0.5 |
| Collector-emitter Voltage-Max (V) | 50 |
| Screening Level / Reference Standard | IEC-60134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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