SI2324DS-T1-GE3

Vishay Intertechnology, Inc.

SI2324DS-T1-GE3

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration N-CH
JEDEC-95 Code TO-236AB
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 2.5
Drain Current-Max (ID) (A) 2.3
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 100
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Drain-source On Resistance-Max (ohm) 0.234
Time@Peak Reflow Temperature-Max (s) 30

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215