PMEG3010AESBYL

Nexperia BV

PMEG3010AESBYL

Availability

Design risk

Price trend

Lead time

Semiconductors

Rectifier Diodes

Lead time 6 weeks
Data sheet PMEG3010AESBYL
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Availability

Design risk

Price trend

Lead time

Semiconductors

Rectifier Diodes

Lead time 6 weeks
Data sheet PMEG3010AESBYL

30 V, 1 A low VF MEGA Schottky barrier rectifier

Technical Data
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application GENERAL PURPOSE
JESD-30 Code R-PBCC-N2
Configuration Single
Package Shape RECTANGULAR
Package Style (Meter) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
Number of Phases 1
Terminal Position BOTTOM
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Power Dissipation-Max (W) 0.525
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max (V) 30
Reverse Recovery Time-Max (us) 0.0035
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30
Reverse Current-Max 1.25mA
Reverse Recovery Time-Max 3.5ns

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