K4A4G165WE-BCRC

Samsung Semiconductor, Inc.

K4A4G165WE-BCRC

Availability

Design risk

Price trend

Lead time

Semiconductors

DRAMs

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

DRAMs

Lead time 6 weeks

DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA

Technical Data
I/O Type COMMON
Technology CMOS
Width (mm) 7.5
Access Mode MULTI BANK PAGE BURST
Length (mm) 13.3
JESD-30 Code R-PBGA-B96
Memory Width 16
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style (Meter) GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
Memory IC Type DDR4 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192
Number of Ports 1
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 256MX16
Number of Functions 1
Number of Terminals 96
Terminal Pitch (mm) 0.8
Number of Words Code 256M
Memory Density (bits) 4294967296
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2
Supply Voltage-Max (V) 1.26
Supply Voltage-Min (V) 1.14
Supply Voltage-Nom (V) 1.2
Number of Words (words) 268435456
Sequential Burst Length 4,8
Standby Current-Max (A) 1.0E-5
Supply Current-Max (mA) 133
Interleaved Burst Length 4,8
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 1200
Operating Temperature-Max (Cel) 95
Operating Temperature-Min (Cel) 0

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