CSD16340Q3
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25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
| Application | SWITCHING |
| JESD-30 Code | S-PDSO-N8 |
| Configuration | SINGLE |
| Package Shape | SQUARE |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Matte Tin (Sn) |
| DLA Qualification | Not Qualified |
| Terminal Position | DUAL |
| Additional Feature | AVALANCHE RATED |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 3 |
| Drain Current-Max (ID) (A) | 21 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 25 |
| Feedback Cap-Max (Crss) (pF) | 69 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Avalanche Energy Rating (Eas) (mJ) | 80 |
| Pulsed Drain Current-Max (IDM) (A) | 115 |
| Drain-source On Resistance-Max (ohm) | 0.0078 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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Sourceability North America, LLC
9715 Burnet Rd, Ste 200