LMUN5211T1G

Leshan Radio Co. Ltd.

LMUN5211T1G

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Bipolar Transistors

Lead time 6 weeks
Data sheet LMUN5211T1G
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Bipolar Transistors

Lead time 6 weeks
Data sheet LMUN5211T1G

Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Technical Data
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 35
Power Dissipation-Max (W) 0.31
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Collector Current-Max (IC) (A) 0.1
Collector-emitter Voltage-Max (V) 50

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215