NE58219-T1-A

Renesas Electronics Corp.

NE58219-T1-A

Availability

Design risk

Price trend

Lead time

Semiconductors

RF Power Field-Effect Transistors

Lead time 6 weeks
Data sheet NE58219-T1-A
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Availability

Design risk

Price trend

Lead time

Semiconductors

RF Power Field-Effect Transistors

Lead time 6 weeks
Data sheet NE58219-T1-A

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

Technical Data
Configuration SINGLE
Surface Mount YES
Number of Elements 1
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 60
Operating Temperature-Max (Cel) 125
Collector Current-Max (IC) (A) 0.06
Power Dissipation-Max (Abs) (W) 0.1
Transition Frequency-Nom (fT) (MHz) 3000

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