IRF830ASTRLPBF

VISHAY SILICONIX

IRF830ASTRLPBF

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRF830ASTRLPBF
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRF830ASTRLPBF

Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 5
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 500
Operating Temperature-Max (Cel) 150
Avalanche Energy Rating (Eas) (mJ) 230
Pulsed Drain Current-Max (IDM) (A) 20
Drain-source On Resistance-Max (ohm) 1.4

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215