TPD1E10B06DPYR

Texas Instruments Incorporated

TPD1E10B06DPYR

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Design risk

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Lead time

Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

Lead time 6 weeks
Data sheet TPD1E10B06DPYR
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Availability

Design risk

Price trend

Lead time

Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

Lead time 6 weeks
Data sheet TPD1E10B06DPYR

12-pF, ±5.5V, ±30-kV ESD protection diode in 0402 and SOD-523 package 2-X1SON -40 to 125

Technical Data
Polarity BIDIRECTIONAL
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Technology AVALANCHE
JESD-30 Code R-PBCC-N2
Configuration SINGLE
Package Shape RECTANGULAR
Package Style (Meter) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
J-STD-609 Code e4
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position BOTTOM
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Clamping Voltage-Max (V) 10
Reverse Current-Max (uA) 0.1
Breakdown Voltage-Min (V) 6
Breakdown Voltage-Nom (V) 6
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max (V) 5.5
Operating Temperature-Max (Cel) 125
Operating Temperature-Min (Cel) -40
Non-rep Peak Rev Power Dis-Max (W) 90
Screening Level / Reference Standard IEC-61000-4-2, 4-5
Time@Peak Reflow Temperature-Max (s) 30

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