SKM195GAL07E3
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Insulated Gate Bipolar Transistor, 266A I(C), 650V V(BR)CES, N-Channel
| Application | POWER CONTROL |
| JESD-30 Code | R-XUFM-X5 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| VCEsat-Max (V) | 1.9 |
| Case Connection | ISOLATED |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Element Material | SILICON |
| Turn-on Time-Nom (ton) (ns) | 174 |
| Gate-emitter Voltage-Max (V) | 20 |
| Turn-off Time-Nom (toff) (ns) | 712 |
| Collector Current-Max (IC) (A) | 266 |
| Operating Temperature-Max (Cel) | 175 |
| Operating Temperature-Min (Cel) | -40 |
| Gate-emitter Thr Voltage-Max (V) | 6.4 |
| Collector-emitter Voltage-Max (V) | 650 |
| Screening Level / Reference Standard | IEC-60747-1 |
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