G3R75MT12D

GENESIC SEMICONDUCTOR INC

G3R75MT12D

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet G3R75MT12D
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet G3R75MT12D

SIC MOSFET N-CH 41A TO247-3

Technical Data
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 182
Drain Current-Max (ID) (A) 36
Transistor Element Material SILICON CARBIDE
DS Breakdown Voltage-Min (V) 1200
Feedback Cap-Max (Crss) (pF) 3.8
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 199
Pulsed Drain Current-Max (IDM) (A) 70
Drain-source On Resistance-Max (ohm) 0.097
Screening Level / Reference Standard IEC-60747-8-4

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215