IRF840PBF

VISHAY SILICONIX

IRF840PBF

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRF840PBF
16 results found

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRF840PBF

Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB

Technical Data
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration Single
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style TO-220-3 (TO-220AB)
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Additional Feature AVALANCHE RATED
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 8
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 500
Operating Temperature-Max (Cel) 150
Avalanche Energy Rating (Eas) (mJ) 510
Pulsed Drain Current-Max (IDM) (A) 32
Drain-source On Resistance-Max (ohm) 0.85

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