IXA60IF1200NA

IXYS Corporation

IXA60IF1200NA

Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 6 weeks
Data sheet IXA60IF1200NA
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Availability

Design risk

Price trend

Lead time

Semiconductors

Insulated Gate Bipolar Transistors

Lead time 6 weeks
Data sheet IXA60IF1200NA

Trans IGBT Chip N-CH 1200V

Technical Data
Application POWER CONTROL
JESD-30 Code R-PUFM-X4
Configuration Single
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
Case Connection ISOLATED
Terminal Finish NICKEL
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 290
Transistor Element Material SILICON
Turn-on Time-Nom (ton) (ns) 110
Gate-emitter Voltage-Max (V) 20
Turn-off Time-Nom (toff) (ns) 350
Collector Current-Max (IC) (A) 88
Operating Temperature-Max (Cel) 150
Gate-emitter Thr Voltage-Max (V) 6.5
Collector-emitter Voltage-Max (V) 1200
Screening Level / Reference Standard UL RECOGNIZED

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215