DMN5L06VK-7

Diodes Incorporated

DMN5L06VK-7

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet DMN5L06VK-7
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet DMN5L06VK-7

Trans MOSFET N-CH 50V 0.28A 6-Pin SOT-563 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-F6
Configuration Dual N-CH
Package Shape RECTANGULAR
Package Style SOT-563
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature HIGH RELIABILITY
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.25
Drain Current-Max (ID) (A) 0.28
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 50
Feedback Cap-Max (Crss) (pF) 5
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Drain-source On Resistance-Max (ohm) 3
Screening Level / Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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