NT5CC256M16ER-EK

Nanya Technology Corporation

NT5CC256M16ER-EK

Availability

Design risk

Price trend

Lead time

Semiconductors

DDR3L DRAM

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

DDR3L DRAM

Lead time 6 weeks

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TFBGA

Technical Data
I/O Type COMMON
Technology CMOS
Width (mm) 8
Access Mode MULTI BANK PAGE BURST
Length (mm) 13
JESD-30 Code R-PBGA-B96
Memory Width 16
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style (Meter) GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
Memory IC Type DDR3L DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192
Number of Ports 1
Temperature Grade OTHER
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 256MX16
Number of Functions 1
Number of Terminals 96
Terminal Pitch (mm) 0.8
Number of Words Code 256M
Memory Density (bits) 4294967296
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2
Supply Voltage-Max (V) 1.45
Supply Voltage-Min (V) 1.283
Supply Voltage-Nom (V) 1.35
Number of Words (words) 268435456
Sequential Burst Length 8
Standby Current-Max (A) 0.023
Supply Current-Max (mA) 155
Interleaved Burst Length 8
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 933
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 95
Operating Temperature-Min (Cel) 0
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215