H5ANAG6NCJR-XNC

SK Hynix

H5ANAG6NCJR-XNC

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Design risk

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Lead time

Semiconductors

DRAMs

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

DRAMs

Lead time 6 weeks

DRAM Chip DDR4 SDRAM 16Gbit 1Gx16 1.2V 96-Pin FBGA

Technical Data
I/O Type COMMON
Technology CMOS
Width (mm) 8
Access Mode MULTI BANK PAGE BURST
Length (mm) 13
JESD-30 Code R-PBGA-B96
Memory Width 16
Self Refresh YES
Package Shape RECTANGULAR
Surface Mount YES
Terminal Form BALL
Memory IC Type DDR4 DRAM
Operating Mode SYNCHRONOUS
Number of Ports 1
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 1GX16
Number of Functions 1
Number of Terminals 96
Terminal Pitch (mm) 0.8
Number of Words Code 1G
Memory Density (bits) 17179869184
Package Body Material PLASTIC/EPOXY
Supply Voltage-Max (V) 1.26
Supply Voltage-Min (V) 1.14
Supply Voltage-Nom (V) 1.2
Number of Words (words) 1073741824
Sequential Burst Length 4,8
Standby Current-Max (A) 0.074
Supply Current-Max (mA) 74
Interleaved Burst Length 4,8
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 1600
Operating Temperature-Max (Cel) 85
Operating Temperature-Min (Cel) 0

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