SBCP53-16T1G

ONSEMI

SBCP53-16T1G

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

Lead time 6 weeks
Data sheet SBCP53-16T1G
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Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

Lead time 6 weeks
Data sheet SBCP53-16T1G

Trans GP BJT PNP 80V 1.5A 1500mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R

Technical Data
Application AMPLIFIER
JESD-30 Code R-PDSO-G4
Configuration SINGLE
JEDEC-95 Code TO-261AA
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
VCEsat-Max (V) 0.5
Case Connection COLLECTOR
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type PNP
DC Current Gain-Min (hFE) 100
Power Dissipation-Max (W) 1.5
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260
Collector Current-Max (IC) (A) 1.5
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -65
Collector-emitter Voltage-Max (V) 80
Transition Frequency-Nom (fT) (MHz) 50
Screening Level / Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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