NVMFS5C404NT1G

ONSEMI

NVMFS5C404NT1G

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet NVMFS5C404NT1G
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet NVMFS5C404NT1G

Trans MOSFET N-CH 40V 53A Automotive 5-Pin SO-FL EP T/R

Technical Data
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style DFN-5
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Number of Elements 1
Number of Terminals 5
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 200
Drain Current-Max (ID) (A) 378
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 40
Feedback Cap-Max (Crss) (pF) 120
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 907
Pulsed Drain Current-Max (IDM) (A) 900
Drain-source On Resistance-Max (ohm) 0.0007
Screening Level / Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30
Length 6.1mm

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