NVH4L022N120M3S

ONSEMI

NVH4L022N120M3S

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Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET N-CH SiC 1.2KV 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101

Technical Data
Application SWITCHING
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
Package Shape RECTANGULAR
Package Style (Meter) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 352
Drain Current-Max (ID) (A) 68
Transistor Element Material SILICON CARBIDE
DS Breakdown Voltage-Min (V) 1200
Feedback Cap-Max (Crss) (pF) 12
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 267
Pulsed Drain Current-Max (IDM) (A) 246
Drain-source On Resistance-Max (ohm) 0.03
Screening Level / Reference Standard AEC-Q101

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