NTTFS4C13NTAG

ONSEMI

NTTFS4C13NTAG

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet NTTFS4C13NTAG
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet NTTFS4C13NTAG

Trans MOSFET N-CH 30V 11.7A 8-Pin WDFN EP T/R

Technical Data
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
JESD-609 Code e3
Package Shape SQUARE
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Number of Elements 1
Number of Terminals 5
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 7.2
Transistor Application SWITCHING
DS Breakdown Voltage-Min (V) 30
Operating Temperature-Max (Cel) 150
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) (W) 21.5
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260
Drain-source On Resistance-Max (ohm) 0.0094
Time@Peak Reflow Temperature-Max (s) 30

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