NTMFWS1D5N08XT1G
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Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R
| Application | SWITCHING |
| JESD-30 Code | R-PSSO-F4 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | FLAT |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 194 |
| Drain Current-Max (ID) (A) | 253 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 80 |
| Feedback Cap-Max (Crss) (pF) | 25 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Operating Temperature-Max (Cel) | 175 |
| Operating Temperature-Min (Cel) | -55 |
| Avalanche Energy Rating (Eas) (mJ) | 225 |
| Pulsed Drain Current-Max (IDM) (A) | 1071 |
| Drain-source On Resistance-Max (ohm) | 0.00143 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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Sourceability North America, LLC
9715 Burnet Rd, Ste 200