NTJD4152PT1G

ONSEMI

NTJD4152PT1G

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet NTJD4152PT1G
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet NTJD4152PT1G

Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-G6
Configuration 2 P-Channel (Dual)
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 0.35
Drain Current-Max (ID) (A) 0.88
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Drain-source On Resistance-Max (ohm) 0.26
Time@Peak Reflow Temperature-Max (s) 40

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