PDTC114YT,215
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50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-G3 |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| JEDEC-95 Code | TO-236AB |
| Package Shape | RECTANGULAR |
| Package Style | SOT-23 (SC-59,TO-236) |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| VCEsat-Max (V) | 0.3 |
| Terminal Finish | TIN |
| DLA Qualification | Not Qualified |
| Terminal Position | DUAL |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 4.7 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | NPN |
| DC Current Gain-Min (hFE) | 100 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Peak Reflow Temperature (Cel) | 260 |
| Collector Current-Max (IC) (A) | 0.1 |
| Operating Temperature-Max (Cel) | 150 |
| Collector-emitter Voltage-Max (V) | 50 |
| Power Dissipation Ambient-Max (W) | 0.25 |
| Collector-base Capacitance-Max (pF) | 3.5 |
| Screening Level / Reference Standard | IEC-60134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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