NX138BKM
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Power Field-Effect Transistor, 0.38A I(D), 60V, 2.3ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
| Application | SWITCHING |
| JESD-30 Code | R-PBCC-N3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | CHIP CARRIER |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| FET Technology | TRENCH MOSFET |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | TIN |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 2.8 |
| Drain Current-Max (ID) (A) | 0.38 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 60 |
| Feedback Cap-Max (Crss) (pF) | 2 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Pulsed Drain Current-Max (IDM) (A) | 1.5 |
| Drain-source On Resistance-Max (ohm) | 2.3 |
| Screening Level / Reference Standard | IEC-60134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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