MT53E256M32D1KS-046IT:L
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DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin VFBGA
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 10.0000 |
| Access Mode | MULTI BANK PAGE BURST |
| Length (mm) | 14.5000 |
| JESD-30 Code | R-PBGA-B200 |
| Memory Width | 32 |
| Package Code | VFBGA |
| Self Refresh | YES |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| J-STD-609 Code | e1 |
| Memory IC Type | LPDDR4 DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 8192 |
| Number of Ports | 1 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position | BOTTOM |
| Additional Feature | SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX |
| Memory Organization | 256MX32 |
| Number of Functions | 1 |
| Number of Terminals | 200 |
| Terminal Pitch (mm) | 0.800 |
| Number of Words Code | 256M |
| Memory Density (bits) | 8589934592.0000000000000000 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 0.9500 |
| Supply Voltage-Max (V) | 1.17000 |
| Supply Voltage-Min (V) | 1.06000 |
| Supply Voltage-Nom (V) | 1.1 |
| Number of Words (words) | 268435456.0000000000000000 |
| Sequential Burst Length | 16,32 |
| Standby Current-Max (A) | 0.008600000000000 |
| Supply Current-Max (mA) | 48.700000000000000 |
| Interleaved Burst Length | 16,32 |
| Package Equivalence Code | BGA200,12X20,32/25 |
| Clock Frequency-Max (MHz) | 2133.00000 |
| Operating Temperature-Max (Cel) | 95.0 |
| Operating Temperature-Min (Cel) | -40.0 |
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Sourceability North America, LLC
9715 Burnet Rd, Ste 200