MT29F4G08ABADAWP:D
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SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 48-Pin TSOP-I Tray
| Type | SLC NAND TYPE |
| Technology | CMOS |
| Width (mm) | 12.0000 |
| Length (mm) | 18.4000 |
| JESD-30 Code | R-PDSO-G48 |
| Memory Width | 8 |
| Package Code | TSOP1 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| Memory IC Type | FLASH |
| Operating Mode | ASYNCHRONOUS |
| Parallel/Serial | SERIAL |
| Terminal Finish | Matte Tin (Sn) |
| Write Protection | HARDWARE |
| DLA Qualification | Not Qualified |
| Temperature Grade | COMMERCIAL |
| Terminal Position | DUAL |
| Memory Organization | 512MX8 |
| Number of Functions | 1 |
| Number of Terminals | 48 |
| Terminal Pitch (mm) | 0.500 |
| Number of Words Code | 512M |
| Memory Density (bits) | 4294967296.0000000000000000 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.2000 |
| Supply Voltage-Max (V) | 3.60000 |
| Supply Voltage-Min (V) | 2.70000 |
| Supply Voltage-Nom (V) | 3.3 |
| Data Retention Time-Min | 10 |
| Number of Words (words) | 536870912.0000000000000000 |
| Programming Voltage (V) | 3.3 |
| Standby Current-Max (A) | 0.000100000000000 |
| Supply Current-Max (mA) | 35.000000000000000 |
| Package Equivalence Code | TSSOP48,.8,20 |
| Peak Reflow Temperature (Cel) | 260 |
| Endurance (Write/Erase Cycles) | 100000.000000000000000 |
| Operating Temperature-Max (Cel) | 70.0 |
| Operating Temperature-Min (Cel) | 0.0 |
| Write Cycle Time-Max (tWC) (ms) | 0.0000200000000000 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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Sourceability North America, LLC
9715 Burnet Rd, Ste 200