BSC012N06NSATMA1

INFINEON TECHNOLOGIES AG

BSC012N06NSATMA1

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Power Field-Effect Transistors

Lead time 6 weeks

Trans MOSFET N-CH 60V 36A 8-Pin TSON EP T/R

Technical Data
JESD-30 Code R-PDSO-N8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position DUAL
Number of Elements 1
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 214
Drain Current-Max (ID) (A) 36
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60
Feedback Cap-Max (Crss) (pF) 120
Operating Temperature-Max (Cel) 175
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 911
Pulsed Drain Current-Max (IDM) (A) 1224
Drain-source On Resistance-Max (ohm) 0.0012

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215