MMFTP3160
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Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-G3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-236 |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (W) | 1.4 |
| Drain Current-Max (ID) (A) | 2.6 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Turn-on Time-Max (ton) (ns) | 20.6 |
| DS Breakdown Voltage-Min (V) | 30 |
| Feedback Cap-Max (Crss) (pF) | 40 |
| Peak Reflow Temperature (Cel) | 260 |
| Turn-off Time-Max (toff) (ns) | 12.4 |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Power Dissipation Ambient-Max (W) | 1.4 |
| Pulsed Drain Current-Max (IDM) (A) | 20 |
| Drain-source On Resistance-Max (ohm) | 0.09 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
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Sourceability North America, LLC
9715 Burnet Rd, Ste 200